In the modern financial industry system, the structure of products has become more and more complex, and the bottleneck constraint of classical computing power has already restricted the development of the financial industry. Here, we present a photonic chip that implements the unary approach to European option pricing, in combination with the quantum amplitude estimation algorithm, to achieve quadratic speedup compared to classical Monte Carlo methods. The circuit consists of three modules: one loading the distribution of asset prices, one computing the expected payoff, and a third performing the quantum amplitude estimation algorithm to introduce speedups. In the distribution module, a generative adversarial network is embedded for efficient learning and loading of asset distributions, which precisely captures market trends. This work is a step forward in the development of specialized photonic processors for applications in finance, with the potential to improve the efficiency and quality of financial services.

To optimize the dark current characteristic and detection efficiency of the 1550 nm weak light signal at room temperature, this work proposes a Ge-on-Si avalanche photodiode (APD) in Geiger mode, which could operate at 300 K. This lateral separate absorption charge multiplication APD shows a low breakdown voltage (V_br) in Geiger mode of -7.42V and low dark current of 0.096 nA at unity gain voltage (V_Gain=1 = -7.03 V). Combined with an RF amplifier module and counter, the detection system demonstrates a low dark count rate (DCR) of 1.1×106counts per second and high detection efficiency η of 7.8% for 1550 nm weak coherent pulse detection at 300 K. The APD reported in this work weakens the dependence of the weak optical signal recognition on the low environment temperature and makes single-chip integration of the single-photon level detection system possible.

Optical phased array (OPA) technology is considered a promising solution for solid-state beam steering to supersede the traditional mechanical beam steering. As a key component of the LIDAR system for long-range detection, OPAs featuring a wide steering angle and high resolution without beam aliasing are highly desired. However, a wide steering range requires a waveguide pitch less than half of the wavelength, which is easily subjected to cross talk. Besides, high resolution requires a large aperture, and it is normally achieved by a high count number of waveguides, which complicates the control system. To solve the mentioned issues, we design two high-performance 128-channel OPAs fabricated on a multilayered SiN-on-SOI platform. Attributed to the nonuniform antenna pitch, only 128 waveguides are used to achieve a 4 mm wide aperture. Besides, by virtue of innovative dual-level silicon nitride (Si3N4) waveguide grating antennas, the fishbone antenna OPA achieves a 100°×19.4° field of view (FOV) with divergence of 0.021°×0.029°, and the chain antenna OPA realizes a 140°×19.23° FOV with divergence of 0.021°×0.1°. To our best knowledge, 140° is the widest lateral steering range in two-dimensional OPA, and 0.029° is the smallest longitudinal divergence. Finally, we embed the OPA into a frequency-modulated continuous-wave system to achieve 100 m distance measurement. The reflected signal from 100 m distance is well detected with 26 dBm input transmitter power, which proves that OPA serves as a promising candidate for transceiving optical signal in a LIDAR system.

Silicon photonic integrated circuits for telecommunication and data centers have been well studied in the past decade, and now most related efforts have been progressing toward commercialization. Scaling up the silicon-on-insulator (SOI)-based device dimensions in order to extend the operation wavelength to the short mid-infrared (MIR) range (2–4 μm) is attracting research interest, owing to the host of potential applications in lab-on-chip sensors, free space communications, and much more. Other material systems and technology platforms, including silicon-on-silicon nitride, germanium-on-silicon, germanium-on-SOI, germanium-on-silicon nitride, sapphire-on-silicon, SiGe alloy-on-silicon, and aluminum nitride-on-insulator are explored as well in order to realize low-loss waveguide devices for different MIR wavelengths. In this paper, we will comprehensively review silicon photonics for MIR applications, with regard to the state-of-the-art achievements from various device demonstrations in different material platforms by various groups. We will then introduce in detail of our institute’s research and development efforts on the MIR photonic platforms as one case study. Meanwhile, we will discuss the integration schemes along with remaining challenges in devices (e.g., light source) and integration. A few application-oriented examples will be examined to illustrate the issues needing a critical solution toward the final production path (e.g., gas sensors). Finally, we will provide our assessment of the outlook of potential future research topics and engineering challenges along with opportunities.